| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| HLMP-UL07 HLMP-UL14 HLMP-UG06 HLMP-UH06 HLMP-DL08 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
T-1 - 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP-PowerPAD -40 to 85
High-Speed Fully Differential Amplifier, /-5 V 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SON -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SOIC -40 to 85
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP -40 to 85
Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP-PowerPAD -40 to 85
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 10x31.5 mm; Packaging: Bulk
Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-SOIC -40 to 85
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 1SS226T5LFT 1SS226TE85L |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS33607 1SS336 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| HN1D03F |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS361F |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| L1SS226LT1G L1SS226LT1 |
Ultra High Speed Switching Application
|
LRC[Leshan Radio Company]
|
| HN4D02JU |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS18107 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
